Research Interests:
Hand rejuvenation is becoming more popular as a complementary procedure to facial treatments. Current options include the relatively invasive lipofilling and the less invasive dermal fillers treatments, of which the latter often is too... more
Hand rejuvenation is becoming more popular as a complementary procedure to facial treatments. Current options include the relatively invasive lipofilling and the less invasive dermal fillers treatments, of which the latter often is too short lasting. An ideal product would therefore be minimally invasive, however, providing longer lasting results. The objective of this pilot study is to evaluate the safety and efficacy of a polycaprolactone based dermal filler for hand rejuvenation. The dorsum of the hands of five subjects was treated with 1.0 mL polycaprolactone based dermal filler per hand. Subjects were seen for follow-up visits after 1, 4, 16, and 24 weeks. The results showed consistent and high patient satisfaction throughout the duration of the study using a Visual Analog Scale. Satisfaction was rated at 82% at 24 weeks and patients were 88% likely to return for repeat treatments on average. On the subject GAIS assessment, all subjects reported an improvement compared to pretreatment throughout the duration of the study. The physicians' GAIS results were very much improved (90%) and much improved (10%) compared to pretreatment throughout the 24 weeks follow-up. The data of this small pilot suggest that the polycaprolactone based dermal filler is safe, well tolerated and effective for hand rejuvenation, and potentially offers a valuable addition to the current treatment armamentum. Additional studies in a larger patient population should be performed to confirm these findings.
Research Interests:
Research Interests:
ABSTRACT P-type thin-film transistors (TFTs) using room temperature sputtered tin and copper oxide as a transparent oxide semiconductor have been produced on rigid and paper substrates. The SnOx films shows p-type conduction presenting a... more
ABSTRACT P-type thin-film transistors (TFTs) using room temperature sputtered tin and copper oxide as a transparent oxide semiconductor have been produced on rigid and paper substrates. The SnOx films shows p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal beta-Sn and alpha-SnOx phases, after annealing at 200 degrees C. These films exhibit a hole carrier concentration in the range of approximate to 10(16)-10(18) cm(-3), electrical resistivity between 10(1)-10(2) Omega cm, Hall mobility of 4.8 cm(2)/Vs, optical band gap of 2.8 eV and average transmittance approximate to 85 % (400 to 2000 nm). Concerning copper oxide CuxO thin films they exhibit a polycrystalline structure with a strongest orientation along (111) plane. The CuxO films produced between an oxygen partial pressure of 9 to 75% showed p-type behavior, as it was measured by Hall effect and Seebeck measurements. The bottom gate p-type SnOx TFTs present field-effect mobility above 1.24 cm(2)/Vs (including the paper p-type oxide TFT) and an on/off modulation ratio of 10(3) while the CuxO TFTs exhibit a field-effect mobility of 1.3x10(-3) cm(2)/Vs and an on/off ratio of 2x10(2).